10v drive nch mosfet R6008FNJ ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) fast reverse recovery time (t rr ) 2) low on-resistance. 3) fast switching speed. 4) gate-source voltage v gss garanteed to be 30v . 5) drive circuits can be simple. 6) parallel use is easy. ? application ? inner circuit switching ? packaging specifications package taping code tl basic ordering unit (pieces) 1000 R6008FNJ ? ? absolute maximum ratings (ta ? 25c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 8a pulsed i dp ? 32 a continuous i s 8a pulsed i sp 32 a avalanche current i as 4a avalanche energy e as 4.3 mj power dissipation (tc=25 )p d 50 w channel temperature t ch 150 ? c range of storage temperature t stg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l P 500 ? h, v dd =50v, rg=25 ? , starting tch=25 *3 limited only by maximum temperature allowed. ? thermal resistance symbol limits unit channel to case r th (ch-c) 2.5 ? c / w type parameter source current (body diode) drain current parameter *1 *1 *3 *3 *2 *2 lpts 10.1 4.5 13.1 9.0 3.0 0.78 2.54 5.08 1.24 0.4 1.0 1.2 1.3 2.7 (1) (2) (3) (1) gate (2) drain (3) source ? 1 body diode (1) (3) (2) ?1 1/5 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6008FNJ symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.0 - 4.0 v v ds =10v, i d =1ma forward transfer admittance l y fs l 2.5 5.0 - s i d =4a, v ds =10v input capacitance c iss - 580 - pf v ds =25v output capacitance c oss - 450 - pf v gs =0v reverse transfer capacitance c rss - 25 - pf f=1mhz turn-on delay time t d(on) - 20 - ns i d =4a, v dd 300v rise time t r - 25 - ns v gs =10v turn-off delay time t d(off) - 60 - ns r l =75 ? fall time t f - 30 - ns r g =10 ? total gate charge q g - 20 - nc i d =8a, gate-source charge q gs -5-ncv dd 300v gate-drain charge q gd - 10 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =8a, v gs =0v reverse recovery time t rr -67-ns *pulsed ? electrical characteristics (ta = 25 ? c) parameter conditions ? parameter static drain-source on-state resistance r ds (on) i d =4a, v gs =10v - 0.73 0.95 i s =8a, di/dt=100a/ ? s conditions * * * * * * * * * * * 2/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6008FNJ ? electrical characteristic curves 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 v gs = 10 v pulsed i d = 4.0 a i d = 8.0 a 0 1 2 3 4 5 6 -50 0 50 100 150 v ds = 10 v i d = 1 ma 0.001 0.01 0.1 1 10 100 0.0 1.5 3.0 4.5 6.0 v ds = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 4 typical transfer characteristics 0 0.5 1 1.5 2 0 5 10 15 i d = 4.0 a i d = 8.0 a t a = 25 pulsed fig. 7 static drain - source on - state resistance vs. gate source voltage 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 9 forward transfer admittance vs. drain current 0.01 0.1 1 10 100 0.1 1 10 100 1000 t a = 25 single pulse pw= 10 ms p w = 100 us p w = 1 ms operation in this area is limited by r ds(on) fig. 1 maximum safe operating area fig. 8 static drain - source on - state resistance vs. channel temperature fig. 5 gate threshold voltage vs. channel temperature drain current : i d (a) drain - source voltage: v ds (v) channel temperature: t ch ( ) gate - source voltage : v gs (v) drain current : i d (a) gate - source voltage : v gs (v) static drain - source on - state resistance : r ds(on) ( ) channel temperature: t ch ( ) static drain - source on - state resistance : r ds(on) ( ) drain current : i d (a) forward transfer admittance : |yfs| (s) drain current : i d (a) gate threshold voltage: v gs (th) (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 drain current : i d [a] drain - source voltage : v ds [v] fig. 2 typical output characteristics ( ) t a = 25 pulsed v gs = 10.0 v v gs = 6.0 v v gs = 7.0 v v gs = 5.0 v v gs = 4.5 v v gs = 8.0 v v gs = 6.5 v 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 9 10 drain current : i d [a] drain - source voltage : v ds [v] fig. 3 typical output characteristics ( ) v gs = 10.0 v v gs = 6.0 v v gs = 6.5 v v gs = 7.0 v v gs = 8.0 v v gs = 5.0 v v gs = 4.5 v t a = 25 pulsed 0.1 1 10 0.1 1 10 100 static drain - source on - state resistance r ds(on) [ ] drain current : i d [a] fig. 6 static drain - source on - state resistance vs. drain current v gs = 10 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 3/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6008FNJ 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 t a = 25 single pulse rth(ch - a) (t) = r(t) rth(ch - a) rth(ch - a) = 49.7 /w 10 100 1000 0.1 1 10 100 t a = 25 di / dt= 100 a / s v gs = 0 v pulsed fig. 13 reverse recovery time vs. source current 0.01 0.1 1 10 100 0 0.5 1 1.5 2 v gs = 0 v pulsed t a = 125 t a = 75 t a = 25 t a = - 25 fig. 10 source current vs. sourse - drain voltage 0 5 10 15 0 10 20 30 t a = 25 v dd = 300 v i d = 8.0 a r g = 10 pulsed fig. 12 dynamic input characteristics 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c iss c oss c rss t a = 25 f= 1 mhz v gs = 0 v fig. 11 typical capacitance vs. drain - source voltage 1 10 100 1000 10000 0.1 1 10 100 t a = 25 v dd = 300 v v gs = 10 v r g = 10 pulsed t r t d(on) t d(off) t f fig. 14 switching characteristics fig. 15 normalized transient thermal resistance vs. pulse width total gate charge : q g (nc) gate - source voltage : v gs (v) drain - source voltage : v ds (v) source - drain voltage : v sd (v) reverse drain current : i s (a) drain current : i d (a) pulse width : pw(s) normarized transient thermal resistance : r (t) source current : i s (a) capacitance : c (pf) reverse recovery time: t rr (ns) switching time : t (ns) 4/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6008FNJ ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 5/5 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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